Concept drawing of a solid state direct conversion Si PIN (CdZnTe) pixel detector. Inside the Si (CdZnTe) detector material is shown. The cloud of electrons and holes move in opposite directions under the influence of an applied electric field. This allows fabrication of thick detectors as the charge injection into adjacent pixels is negligible. The same diagram also applies to Si pixel detectors. Yhe pixels are indium bump bonded onto a VLSI ASIC readout chip with matching pixel pitch.

<Back to MARY™